Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

Abstract

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.

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Cited by in corpus (2)

• Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications
• First-principles modeling of electrostatics and transport in 2D topological transistors