output
20042026
most citedSelective metal deposition at graphene line defects by atomic layer deposition

306 citations

125 papers

cond-mat.mtrl-sci2026

Electron transport in amorphous materials: from localization to predictive transport modeling

Yeonghun Lee

Amorphous materials are disordered solids without long-range structural order, making them useful systems for studying electron transport beyond the crystalline picture. This revie…

cs.LG2026

Estimating Mutual Information between Time Series and Temporal Event Sequences Across Diverse Analysis Tasks

Haoji Hu, Huaqing Mao, Yijun Lin +4

Pairwise dependence measures such as correlation and causality are fundamental to temporal data mining, yet there is still no principled and robust way to quantify dependence betwe…

cond-mat.mtrl-sci2026

Radiative electronic bound states in the continuum from defects in semiconductors

Seong Yun Hong, Liang Z. Tan, Ki Hoon Lee +2

Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects ca…

cond-mat.mes-hall2026★ 1 cited

Terahertz magneto-nanoscopy of encapsulated monolayer graphene

Richard H. J. Kim, Sunwoong Yang, Taehoon Kim +7

This study investigates the nanoscale conductivity of encapsulated monolayer graphene at temperatures down to 5 K and magnetic fields of up to 1 T. We use the scattering-type scann…

cond-mat.mtrl-sci2026

Role of surface states and band modulations in ultrathin ruthenium interconnects

Gyungho Maeng, Subeen Lim, Mi Gyoung Lee +3

Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based inter…

cond-mat.mtrl-sci2026

First-principles high-throughput screening of ruthenium compounds for advanced interconnects

Gyungho Maeng, Subeen Lim, Bonggeun Shong +1

As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance.…