Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO${}_3$

Abstract

Electric-field driven magnetization switching in FePt/BaTiO${}_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon ferroelectric polarization reversal, a process sensitively controlled by epitaxial strain with threshold strain strain($\eta$) $\eta \approx \%$. At this phenomena, a large interfacial magnetoelectric coupling (${\alpha }_I=3.6\times 10^{-10}$ G$\cdot$cm${}^2$/V) is responsible, stemming from the orbital reconstruction. In particular, the redistribution of Pt-$d$ orbital occupancy alters spin-orbit coupling, thereby tuning the competition between magnetic anisotropy ($K_i$) and magnetoelastic energy ($b_1$). Our work clarifies the fundamental physics of strain-engineered magnetoelectricity and suggests a concrete pathway for designing ultra-low-power voltage-controlled magnetic memory.

5 pages, 5 figures

References in corpus (4)

• Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO3 multilayers
• Theory of perpendicular magnetocrystalline anisotropy in Fe/MgO (001)
• Inverse spin Hall effect in a closed loop circuit
• Enhanced voltage-controlled magnetic anisotropy via magneto-elasticity in FePt/MgO(001)