306 citations
- Institute for Basic ScienceKR20 papers
- Seoul National UniversityKR19 papers
- Korea Advanced Institute of Science and TechnologyKR12 papers
- University of UlsanKR10 papers
- Ulsan National Institute of Science and TechnologyKR9 papers
- Hanyang UniversityKR5 papers
- Lawrence Berkeley National LaboratoryUS4 papers
- National Institute for Mathematical SciencesKR4 papers
- National University CollegePR4 papers
- Pohang University of Science and TechnologyKR4 papers
- Yonsei UniversityKR4 papers
- Brookhaven National LaboratoryUS3 papers
26 papers · 1 filter
Electron transport in amorphous materials: from localization to predictive transport modeling
Yeonghun Lee
Amorphous materials are disordered solids without long-range structural order, making them useful systems for studying electron transport beyond the crystalline picture. This revie…
Radiative electronic bound states in the continuum from defects in semiconductors
Seong Yun Hong, Liang Z. Tan, Ki Hoon Lee +2
Continuum-buried defect states in semiconductors are generally expected to be optically inactive due to their strong coupling to continuum bands. Here, we show that such defects ca…
Role of surface states and band modulations in ultrathin ruthenium interconnects
Gyungho Maeng, Subeen Lim, Mi Gyoung Lee +3
Mitigating the RC delay from transistor miniaturization is essential for next-generation devices, driving a focus on interconnect electrical performance. Current copper-based inter…
First-principles high-throughput screening of ruthenium compounds for advanced interconnects
Gyungho Maeng, Subeen Lim, Bonggeun Shong +1
As interconnect dimensions continue to shrink, the industry-standard copper faces a critical increase in resistivity, presenting a significant hurdle to overall device performance.…
Cobalt Binary Compounds for Advanced Interconnect Materials
Gyungho Maeng, Yeonghun Lee
The industrial standard copper (Cu) interconnects face a substantial resistivity increase at thinner linewidths, posing a well-known challenge to limit overall device performance.…
Validation of constant mean free path and relaxation time approximations for metal resistivity: explicit treatment of electron-phonon interactions
Subeen Lim, Yumi Kim, Gyungho Maeng +1
The figure of merit the product of resistivity and mean free path (MFP) evaluated from first-principles calculations, is widely adopted to screen promising interconnect metals…