Beyond the upper limit of magnetic anisotropy in two-dimensional transition metal dichalcogenides

Abstract

Exploring an upper limit of magnetic anisotropy in two-dimensional materials, such as graphene and transition metal dichalcogenides, is at the heart of spintronics research. Herein, an atomic-scale perpendicular magnetic anisotropy up to an order of 100 meV per atom, which is far beyond the ordinarily obtained value in graphene and pristine transition metal dichalcogenides, is demonstrated in individual ruthenium and osmium adatoms at a monosulfur vacancy in molybdenum disulfide. We further propose a phenomenological model where a spin state transition that involves hybridization between molybdenum a1 and adatomic e' orbitals is a possible mechanism for magnetization reorientation.

5 pages, 5 figures

References in corpus (1)

• Magnetization reversal of giant perpendicular magnetic anisotropy at the magnetic-phase transition in FeRh films on MgO

Cited by in corpus (7)

• Role of exchange splitting and ligand field splitting in tuning the magnetic anisotropy of an individual iridium atom on TaS2 substrate
• Giant strain control of magnetoelectric effect in Ta/Fe/MgO
• DFT+U Investigation of magnetocrystalline anisotropy of Mn-doped transition-metal dichalcogenides monolayers
• Vertical-orbital band center as an activity descriptor for hydrogen evolution reaction on single-atom-anchored 2D catalysts
• Room-temperature superparamagnetism due to giant magnetic anisotropy in Mo${}_S$ defected single-layer MoS${}_2$
• Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of two-dimensional ferroelectric In2Se3 substrate
• Inducing and Manipulating Magnetization in Two-Dimensional ZnO by Strain and External Gating