Phase Transition and Field Effect Topological Quantum Transistor made of monolayer MoS2

Abstract

We study topological phase transitions and topological quantum field effect transistor in monolayer Molybdenum Disulfide (MoS2) using a two-band Hamiltonian model. Without considering the quadratic (q^2) diagonal term in the Hamiltonian, we show that the phase diagram includes quantum anomalous Hall (QAH), quantum spin Hall (QSH), and spin quantum anomalous Hall effect (SQAH) regions such that the topological Kirchhoff law is satisfied in the plane. By considering the q^2 diagonal term and including one valley, it is shown that MoS2 has a non-trivial topology, and the valley Chern number is non-zero for each spin. We show that the wave function is (is not) localized at the edges when the q^2 diagonal term is added (deleted) to (from) the spin-valley Dirac mass equation. We calculate the quantum conductance of zigzag MoS2 nanoribbons by using the nonequilibrium Green function method and show how this device works as a field effect topological quantum transistor.

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Cited by in corpus (1)

• Momentum relaxation effects in 2D-Xene field effect device structures