Klein Tunneling and Berry Phase in Bilayer Graphene with a Band Gap
arXiv:1103.3331 · doi:10.1103/PhysRevB.84.235432
Abstract
Klein tunneling in gapless bilayer graphene, perfect reflection of electrons injecting normal to a pn junction, is expected to disappear in the presence of energy band gap induced by external gates. We theoretically show that the Klein effect still exists in gapped bilayer graphene, provided that the gaps in the n and p regions are balanced such that the polarization of electron pseudospin has the same normal component to the bilayer plane in the regions. We attribute the Klein effect to Berry phase (rather than the conventional value of bilayer graphene) and to electron-hole and time-reversal symmetries. The Klein effect and the Berry phase can be identified in an electronic Veselago lens, an important component of graphene-based electron optics.
Revised version; Main text (4 pages, 4 figures) + Supplemetal material (3 pages, 1 figure)
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Cited by in corpus (18)
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- Visualization and Control of Single Electron Charging in Bilayer Graphene Quantum Dots
- Electron optics with dirac fermions: electron transport in monolayer and bilayer graphene through magnetic barrier and their superlattices
- Band gap and broken chirality in single-layer and bilayer graphene
- Intraband electron focusing in bilayer graphene
- Magneto-optics of monolayer and bilayer graphene
- Electron collimation at van der Waals domain walls in bilayer graphene
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- Electronic cloaking of confined states in phosphorene junctions
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- Evanescent-mode-assisted Klein tunneling in dual-gated bilayer graphene