Electronic cloaking of confined states in phosphorene junctions
arXiv:2110.05565 · doi:10.1088/1361-648X/ac54e4
Abstract
We study the electronic transport of armchair and zigzag gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of armchair junctions confined states are reflected in the transmission properties as Fabry-Pérot resonances at normal and oblique incidence. In the case of zigzag junctions confined states are invisible at normal incidence, resulting in a null transmission. At oblique incidence Fabry-Pérot resonances are presented in the transmission as in the case of armchair junctions. This invisibility or electronic cloaking is related to the highly direction-dependent pseudospin texture of the charge carriers in phosphorene. Electronic cloaking is also manifested as a series of singular peaks in the conductance and as inverted peaks in the Seebeck coefficient. The characteristics of electronic cloaking are also susceptible to the modulation of the phosphorene bandgap and an external magnetic field. So, electronic cloaking in phosphorene junctions in principle could be tested through transport, thermoelectric or magnetotransport measurements.
References in corpus (25)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Phosphorene: A New 2D Material with High Carrier Mobility
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Chiral tunneling and the Klein paradox in graphene
- Isolation and characterization of few-layer black phosphorus
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Quasiparticle band structure and tight-binding model for single- and bilayer black phosphorus
- Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
- Cloaking of Matter Waves
- Klein tunneling in graphene: optics with massless electrons
- Electrically Tunable Quasi-Flat Bands, Conductance and Field Effect Transistor in Phosphorene
- Experimental demonstration of a multiphysics cloak: manipulating heat flux and electric current simultaneously
- A universal Hamiltonian for the motion and the merging of Dirac cones in a two-dimensional crystal
- Scaling laws for band gaps of phosphorene nanoribbons: A tight-binding calculation
- Strain-induced topological phase transition in phosphorene and phosphorene nanoribbons
- Electron-doped phosphorene: A potential monolayer superconductor
- Tuning anti-Klein to Klein tunneling in bilayer graphene
- Chirality-Assisted Electronic Cloaking in Bilayer Graphene Nanostructures
- Electron optics in phosphorene pn junctions: Negative reflection and anti super-Klein tunneling
- Klein Tunneling and Berry Phase in Bilayer Graphene with a Band Gap
- Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder
- Band gap and broken chirality in single-layer and bilayer graphene
- Anisotropic transport of normal metal-barrier-normal metal junctions in monolayer phosphorene
- Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures
- Hybrid matrix method for stable numerical analysis of the propagation of Dirac electrons in gapless bilayer graphene superlattices