Magnetic Field Effect on Strained Graphene Junctions

Abstract

We investigate the spin-dependent transport properties of a ferromagnetic/strained/normal graphene junctions with central region subjected to a magnetic field $B$. An analytical approach, based on Dirac equation, is implemented to obtain the eigenstates and eigenvalues of the charge carrier in three regions. Using the transfer matrix method, we determine the spin-dependent transmission in the presence of an applied strain along the armchair and zigzag directions of the graphene sample. We find that the strain remarkably modifies the Landau levels (LLs) originating from the applied $B$. It is shown that the spin up/down energy bands, in the first region, are shifted by the exchange $H_{ex}$ and left the whole spectrum linear as in the case of pristine graphene. In the central region, the position of the Dirac point changes due to the uniaxial strain and $B$. It is also found that the uniaxial strain in graphene induces a contraction of the LLs spectra. Moreover, the strain and $B$ modify the shape and position of some peaks in the transmission probabilities.

arXiv comment15 pages, 8 figures

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Cited by in corpus (2)

• Anomalous Floquet tunneling in uniaxially strained graphene
• Tunneling in an anisotropic cubic Dirac semi-metal