Enhanced Andreev reflection in gapped graphene
arXiv:1208.2461 · doi:10.1103/PhysRevB.86.075443
Abstract
We theoretically demonstrate unusual features of superconducting proximity effect in gapped graphene which presents a pseudospin symmetry-broken ferromagnet with a net pseudomagnetization. We find that the presence of a band gap makes the Andreev conductance of graphene superconductor/pseudoferromagnet (S/PF) junction to behave similar to that of a graphene ferromagnet-superconductor junction. The energy gap enhance the pseudospin inverted Andreev conductance of S/PF junction to reach a limiting maximum value for , which depending on the bias voltage can be larger than the value for the corresponding junction with no energy gap. We further demonstrate a damped-oscillatory behavior for the local density of states of the PF region of S/PF junction and a long-range crossed Andreev reflection process in PF/S/PF structure with antiparallel alignment of pseudomagnetizations of PFs, which confirm that, in this respect, the gapped normal graphene behaves like a ferromagnetic graphene.
7.2 pages, 5 figures, accepted for publication in Phys. Rev. B
References in corpus (25)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Substrate-induced band gap opening in epitaxial graphene
- Valley filter and valley valve in graphene
- Unconventional Integer Quantum Hall effect in graphene
- Andreev reflection and Klein tunneling in graphene
- Bipolar supercurrent in graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Quantum-limited shot noise in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Specular Andreev reflection in graphene
- Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene
- Josephson Current and Multiple Andreev Reflections in Graphene SNS Junctions
- Pseudospin Magnetism in Graphene
- Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
- Crossed Andreev reflection in a graphene bipolar transistor
- Shot Noise in Graphene
- A supercurrent switch in graphene -junctions
- Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction
- Graphene-based electronic spin lenses
- Andreev-Klein reflection in graphene ferromagnet-superconductor junctions
- Pseudospin in optical and transport properties of graphene
- Pseudospin polarized quantum transport in monolayer graphene
- Long range Josephson coupling through ferromagnetic graphene
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- The influence of anti-chiral edge states on Andreev reflection in graphene-superconductor junction
- Spin-valley dependent double Andreev reflections in the proximitized graphene/superconductor junction
- Pseudo-spin triplet superconductivity in transition-metal dichalcogenide monolayers and Andreev reflection in the lateral heterostructures of 2-NbSe
- Andreev tunnelling and Josephson current in light irradiated graphene
- Andreev and normal reflections in gapped bilayer graphene-superconductor junctions
- New supercurrent pattern in quantum point contact with strained graphene nanoribbon
- Electrical and thermal transport in a twisted heterostructure of transition metal dichalcogenide and CrI connected to a superconductor
- Transport through Nodal Surface Semimetal-Superconductor junction in absence/presence of light irradiation