Strain Effect on Transmission in Graphene Laser Barrier
arXiv:2111.14137 · doi:10.1016/j.ssc.2022.114916
Abstract
We investigate the strain effect along armchair and zigzag directions on the tunneling transport of Dirac fermions in graphene laser barrier through a time dependent potential along y-axis. Our system is composed of three regions and the central one is subjected to a deformation of strength S. Based on Dirac equation and the Floquet approach, we determine the eigenvalues and eigenspinors for each region. Using the boundary conditions at interfaces together with the transfer matrix method we identify the transmission in the different Floquet sideband states as function of the physical parameters. In the strainless case, we show that the transmisson of central band decreases for smaller values of the barrier width and rapidly oscillates with different amplitude for larger ones. Whereas the transmission for the first sidebands increases from zero and shows a damped oscillatory profile. It is found that the number of oscillations in all transmission channels reduces with increasing the strength of armchair strain but becomes more important by switching the deformation to zigzag. Moreover, it is observed the appearance of Fano type resonance peaks by altering the amplitude and the frequency of the laser field.
16 pages, 7 figures
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Unconventional Integer Quantum Hall effect in graphene
- A tight-binding approach to uniaxial strain in graphene
- Andreev reflection and Klein tunneling in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Conductance of p-n-p graphene structures with 'air-bridge' top gates
- Bilayer graphene with single and multiple electrostatic barriers: band structure and transmission
- Photon-assisted electron transport in graphene