Coherent-scatterer enhancement and Klein-tunneling suppression by potential barriers in gapped graphene with chirality-time-reversal symmetry
arXiv:2106.10567 · doi:10.1088/1361-648X/ac2866
Abstract
We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a square potential barrier. Transmission coefficient is calculated numerically for each case and applied to corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in a gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated potential barriers. Moreover, we investigate the effect from a bias field applied to those barrier profiles, from which we show that it enables the control of electron flow under normal incidence. Meanwhile, the suppression of Klein tunneling is found more severe for a non-square barrier and exhibits a strong dependence on bias-field polarity for all kinds of barriers. Finally, roles of a point impurity on electron transmission and conductance are analyzed with a sharp peak appearing in electron conductance as the impurity atom is placed at the middle of a square barrier. For narrow triangular and Gaussian barriers, however, the conductance peaks become significantly broadened, associated with an enhancement in tunneling conductance.
References in corpus (26)
- The electronic properties of graphene
- Chiral tunneling and the Klein paradox in graphene
- Substrate-induced band gap opening in epitaxial graphene
- Electronic States of Graphene Nanoribbons
- Andreev reflection and Klein tunneling in graphene
- Quantum interference and Klein tunneling in graphene heterojunctions
- Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Disorder Induced Localized States in Graphene
- Irradiated graphene as a tunable Floquet topological insulator
- The thermopower and Nernst Effect in graphene in a magnetic field
- Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
- Dynamical polarization, screening, and plasmons in gapped graphene
- Zero Energy Modes and Gate-Tunable Gap in Graphene on hexagonal Boron Nitride
- Localized states at zigzag edges of bilayer graphene
- Supercritical Coulomb Impurities in Gapped Graphene
- All-optical band engineering of gapped Dirac materials
- Impurity-assisted tunneling in graphene
- Finite difference method for transport properties of massless Dirac fermions
- Dynamical polarization of monolayer graphene in a magnetic field
- Revealing Hofstadter Spectrum for Graphene in a Periodic Potential
- Many-Body Effects and Optical Properties of Single- and Double Layer - Lattices
- Finite-difference method for transport of two-dimensional massless Dirac fermions in a ribbon geometry
- Interplay of Lorentz-Berry forces in position-momentum spaces for valley-dependent impurity scattering in alpha-T3 lattices
- Effect of Energy Band Gap in Graphene on Negative Refraction through the Veselago Lens and Electron Conductance
- Transport in graphene nanostructures with spatially modulated gap and potential