All-optical band engineering of gapped Dirac materials

Abstract

We demonstrate theoretically that the interaction of electrons in gapped Dirac materials (gapped graphene and transition-metal dichalchogenide monolayers) with a strong off-resonant electromagnetic field (dressing field) substantially renormalizes the band gaps and the spin-orbit splitting. Moreover, the renormalized electronic parameters drastically depend on the field polarization. Namely, a linearly polarized dressing field always decreases the band gap (and, particularly, can turn the gap into zero), whereas a circularly polarized field breaks the equivalence of valleys in different points of the Brillouin zone and can both increase and decrease corresponding band gaps. As a consequence, the dressing field can serve as an effective tool to control spin and valley properties of the materials and be potentially exploited in optoelectronic applications.

arXiv commentPublished version

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• Quantum-statistical theory for laser-tuned transport and optical conductivities of dressed electrons in $α-\mc{T}_3$ materials
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• Dynamical Floquet spectrum of Kekulé-distorted graphene under normal incidence of electromagnetic radiation
• Dynamical band gap tuning in Weyl semi-metals by intense elliptically polarized normal illumination and its application to $8-Pmmn$ borophene
• Exploring the Optical States for Black Phosphorus: Anisotropy and Bandgap Tuning
• Many-Body Effects and Optical Properties of Single- and Double Layer $\alpha$-${\mathcal{T}}_3$ Lattices
• Floquet engineering of excitons in semiconductor quantum dots
• Floquet spectrum for anisotropic and tilted Dirac materials under linearly polarized light at all field intensities
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• Optically induced topological states on the surface of mercury telluride
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• Floquet engineering of the Luttinger Hamiltonian
• Photo-induced Entanglement in a Magnonic Floquet Topological Insulator
• Floquet theory of spin dynamics under circularly polarized light pulses
• Impact of high-frequency pumping on anomalous finite-size effects in three-dimensional topological insulators
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• Optically induced persistent current in carbon nanotubes
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• Effect of Strain on Band Engineering in Gapped Graphene
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• Research on topological materials using ultrafast spectroscopy