Floquet interface states in illuminated three-dimensional topological insulators
arXiv:1502.04098 · doi:10.1103/PhysRevB.91.241404
Abstract
Recent experiments showed that the surface of a three dimensional topological insulator develops gaps in the Floquet-Bloch band spectrum when illuminated with a circularly polarized laser. These Floquet-Bloch bands are characterized by non-trivial Chern numbers which only depend on the helicity of the polarization of the radiation field. Here we propose a setup consisting of a pair of counter-rotating lasers, and show that one-dimensional chiral states emerge at the interface between the two lasers. These interface states turn out to be spin-polarized and may trigger interesting applications in the field of optoelectronics and spintronics.
5 pages with 3 figures + supplemental material
References in corpus (26)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Topological Insulators with Inversion Symmetry
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- Topological Field Theory of Time-Reversal Invariant Insulators
- Photovoltaic Hall effect in graphene
- Periodically-driven quantum systems: Effective Hamiltonians and engineered gauge fields
- Irradiated graphene as a tunable Floquet topological insulator
- Surface State Magnetization and Chiral Edge States on Topological Insulators
- Tuning laser-induced bandgaps in graphene
- Multiterminal Conductance of a Floquet Topological Insulator
- Out of equilibrium electrons and the Hall conductance of a Floquet topological insulator
- Effective Theory of Floquet Topological Transitions
- Dissipative Floquet Topological Systems
- Modulated Floquet Topological Insulators
- Optical response of graphene under intense terahertz fields
- Effect of radiation on transport in graphene
- Radiation effects on the electronic structure of bilayer graphene
- Scattering Theory for Floquet-Bloch States
- Occupation of topological Floquet bands in open systems
- Stability of a Floquet Bose-Einstein condensate in a one-dimensional optical lattice
- Aspects of Floquet Bands and Topological Phase Transitions in a Continuously Driven Superlattice
- Magnetization signatures of light-induced quantum Hall edge states
- Classification of Floquet Statistical Distribution for Time-Periodic Open Systems
- Topological Floquet states on a Möbius band irradiated by circularly polarised light
Cited by in corpus (15)
- Topological invariants of Floquet systems: General formulation, special properties, and Floquet topological defects
- All-optical band engineering of gapped Dirac materials
- Floquet band structure of a semi-Dirac system
- Effective Floquet Hamiltonian in the low-frequency regime
- Quadratic band touching points and flat bands in two-dimensional topological Floquet systems
- Optically induced Lifshitz transition in bilayer graphene
- Topological invariants for Floquet-Bloch systems with chiral, time-reversal, or particle-hole symmetry
- Floquet engineering of excitons in semiconductor quantum dots
- Light-induced bound electron states in two-dimensional systems: Contribution to electron transport
- Universal driving protocol for symmetry-protected Floquet topological phases
- Floquet theory of spin dynamics under circularly polarized light pulses
- Floquet boundary states in AB-stacked graphite
- All-optical control of excitons in semiconductor quantum wells
- Low-frequency and Moiré Floquet engineering: a review
- Optical trapping of electrons in graphene