Valley Hall Transport of Photon-Dressed Quasiparticles in 2D Dirac Semiconductors
arXiv:1803.06607 · doi:10.1088/1367-2630/aad5f8
Abstract
We present a theory of the photovoltaic valley-dependent Hall effect in a two-dimensional Dirac semiconductor subject to an intense near-resonant electromagnetic field. Our theory captures and elucidates the influence of both the field-induced resonant interband transitions and the nonequilibrium carrier kinetics on the resulting valley Hall transport in terms of photon-dressed quasiparticles. The non-perturbative renormalization effect of the pump field manifests itself in the dynamics of the photon-dressed quasiparticles, with a quasienergy spectrum characterized by {dynamical gaps ( is the valley index)} that strongly depend on field amplitude and polarization. Nonequilibrium carrier distribution functions are determined by the pump field frequency as well as the ratio of intraband relaxation time and interband recombination time . We obtain analytic results in three regimes, when (I) all relaxation processes are negligible, (II) , and (III) , and display corresponding asymptotic dependences on and . We then apply our theory to two-dimensional transition-metal dichalcogenides, and find a strong enhancement of valley-dependent Hall conductivity as the pump field frequency approaches the transition energies between the pair of spin-resolved conduction and valence bands at the two valleys.
6 pages, 4 figures
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- Photo-Induced Anomalous Hall Effect in Two-Dimensional Transition-Metal Dichalcogenides
- Acoustoelectric effect in two-dimensional Dirac materials exposed to Rayleigh surface acoustic waves
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