Impurity-band optical transitions in two-dimensional Dirac materials under strain-induced synthetic magnetic field

Abstract

We develop a theory of optical transitions in Coulomb impurity-doped two-dimensional transition metal dichalcogenide monolayers and study the transitions from the spin-resolved valence band to the (Coulomb) donor and acceptor impurities under the influence of a synthetic valley-selective magnetic field produced by a mechanical strain. It is shown that the optical properties of the system are determined by the strength of the synthetic magnetic field, which uncovers an experimental tool, which can be used to manipulate the properties of two-dimensional materials in valley magneto-optoelectronics.

Manuscript: 9 pages, 5 figures

References in corpus (6)

• Valley polarization in MoS2 monolayers by optical pumping
• The Valley Hall Effect in MoS2 Transistors
• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
• Valley Acoustoelectric Effect
• Acoustomagnetoelectric effect in two-dimensional materials: Geometric resonances and Weiss oscillations