Nonlinear circular valley photogalvanic effect
arXiv:2106.01600 · doi:10.1103/PhysRevB.104.075424
Abstract
We develop a theory of circular photogalvanic effect in non-gyrotropic two-dimensional transition metal dichalcogenide monolayers under interband optical transitions. Oblique incidence of circularly-polarized electromagnetic field or normal incidence of elliptically polarized electromagnetic field is assumed. In contrast to the linear-in-intensity conventional photogalvanic effect, the effect considered here arises in the second intensity order. The effect is conditioned by i) the predominant population of the valleys by the circular in-plane electromagnetic field component and ii) the direct drift of the photo-excited carriers by the linear-polarized in-plane electromagnetic field component in the presence of trigonal valley asymmetry.
7 pages, 2 figures
References in corpus (5)
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Highly crystalline 2D superconductors
- Valley polarization induced second harmonic generation in graphene
- Semiclassical theory of the circular photogalvanic effect in gyrotropic systems
- Nonlinear, anisotropic and giant photoconductivity in intrinsic and doped graphene