Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures
arXiv:1510.07858 · doi:10.1038/srep25253
Abstract
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is electronically controlled via gate voltages. We also demonstrate that the tunneling current of Dirac fermions can be prohibited when the spin configuration of ferromagnetic graphene sheets is opposite. The giant electroresistance can thus be developed by using the proposed heterostructure in this study. The effects of temperature on the spin transport and the giant electroresistance ratio are also investigated. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures through an electric fields via gate and bias electrodes.
19 pages, 5 figures
References in corpus (21)
- Electric Field Effect in Atomically Thin Carbon Films
- Ultrahigh electron mobility in suspended graphene
- Chiral tunneling and the Klein paradox in graphene
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Andreev reflection and Klein tunneling in graphene
- Temperature dependent transport in suspended graphene
- A Graphene Field-Effect Device
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Evidence of Klein tunneling in graphene p-n junctions
- Resonant tunnelling and negative differential conductance in graphene transistors
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
- Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
- Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
- Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Integration of the Ferromagnetic Insulator EuO onto Graphene
- Controllable spin transport in ferromagnetic graphene junctions
- Spin relaxation times in disordered graphene
- Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures