Tunneling of Graphene Massive Dirac Fermions through a Double Barrier
arXiv:1110.0826 · doi:10.1007/s10909-012-0643-2
Abstract
We study the tunneling of Dirac fermions in graphene through a double barrier potential allowing the carriers to have an effective mass inside the barrier as generated by a lattice miss-match with the boron nitride substrate. The consequences of this gap opening on the transmission are investigated. The realization of resonant tunneling conditions is also analyzed.
17 pages, 6 figures
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Cited by in corpus (7)
- Goos-Hanchen like Shifts in Graphene Double Barriers
- Bipolar electron waveguides in graphene
- Guided modes and terahertz transitions for two-dimensional Dirac fermions in a smooth double-well potential
- Effect of Magnetic Field on Goos-Hänchen Shifts in Gaped Graphene Triangular Barrier
- Tunneling of Electrons in Graphene via Double Triangular Barrier in External Fields
- Controlled electron transmission by lead chalcogenide barrier potential
- Transmissions in gapped graphene exposed to tilting and oscillating barriers