Linear Response and the Thomas-Fermi Approximation in Undoped Graphene

Abstract

We analyze the range of validity of Thomas Fermi theory for describing charge density modulations induced by external potentials in neutral graphene. We compare exact results obtained from a tight-binding calculation with those of linear response theory and the Thomas Fermi approximation. For experimentally interesting ranges of size and density amplitudes (electron densities less than $\sim 10^{11}c{m}^{-2}$, and spatial length scales below $\sim 20nm$), linear response is significantly more accurate than Thomas Fermi theory.

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Cited by in corpus (13)

• Electronic transport in two dimensional graphene
• Electron density distribution and screening in rippled graphene sheets
• First-principles Theory of Nonlocal Screening in Graphene
• Charge-Carrier Screening in Single-Layer Graphene
• Universal conductance fluctuations in Dirac materials in the presence of long-range disorder
• Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene
• Two-dimensional electronic transport on the surface of 3D topological insulators
• Ground state of graphene heterostructures in the presence of random charged impurities
• Non-linear screening of external charge by doped graphene
• Orbital-free density functional theory of out-of-plane charge screening in graphene
• Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts
• Spectral and optical properties of doped graphene with charged impurities in the self-consistent Born approximation
• Investigating transverse Hall conductances using two-terminal setups