Magnetic field effect on tunneling through triple barrier in AB bilayer graphene

Mouhamadou Hassane Saley; Ahmed Jellal

doi:10.1016/j.commatsci.2023.112711

paper

Magnetic field effect on tunneling through triple barrier in AB bilayer graphene

arXiv:2301.12479 · doi:10.1016/j.commatsci.2023.112711

Abstract

We investigate electron tunneling in AB bilayer graphene through a triple electrostatic barrier of heights $U_{i} (i = 2, 3, 4)$ subjected to a perpendicular magnetic field. By way of the transfer matrix method and using the continuity conditions at the different interfaces, the transmission probability is determined. Additional resonances appear for two-band tunneling at normal incidence, and their number is proportional to the value of $U_{4}$ in the case of $U_{2} < U_{4}$ . However, when $U_{2} > U_{4}$ , anti-Klein tunneling increases with $U_{2}$ . The transmission probability exhibits an interesting oscillatory behavior when $U_{3} > U_{2} = U_{4}$ and $U_{3} < U_{2} = U_{4}$ . For fixed energy $E = 0.39 γ_{1}$ , increasing barrier widths increases the number of oscillations and decreases Klein tunneling. The interlayer bias creates a gap for $U_{2} < U_{3} < U_{4}$ and $U_{3} > U_{2} = U_{4}$ . In the four-band tunneling case, the transmission decreases in $T_{+}^{+}$ , $T_{+}^{-}$ and $T_{-}^{-}$ channels in comparison with the single barrier case. It does, however, increase for $T_{-}^{+}$ when compared to the single barrier case. Transmission is suppressed in the gap region when an interlayer bias is introduced. This is reflected in the total conductance $G_{tot}$ in the region of zero conductance. Our results are relevant for electron confinement in AB bilayer graphene and for the development of graphene-based transistors.

14 pages, 7 figures. Clarification and references added

Magnetic field effect on tunneling through triple barrier in AB bilayer graphene

Abstract

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