Review on carrier multiplication in graphene

Abstract

The remarkable gapless and linear band structure of graphene opens up new carrier relaxation channels bridging the valence and the conduction band. These Auger scattering processes change the number of charge carriers and can give rise to a significant multiplication of optically excited carriers in graphene. This is an ultrafast many-particle phenomenon that is of great interest both for fundamental many-particle physics as well as technological applications. Here, we review the research on carrier multiplication in graphene and Landau-quantized graphene including theoretical modelling and experimental demonstration.

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• Impact of Auger processes on carrier dynamics in graphene
• High-Energy Limit of Massless Dirac Fermions in Multilayer Graphene using Magneto-Optical Transmission Spectroscopy
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• Can impact excitation explain efficient carrier multiplication in carbon nanotube photodiodes?
• Impact of doping on the carrier dynamics in graphene
• Effect of anisotropic band curvature on carrier multiplication in graphene

Cited by in corpus (6)

• Semimetals for high performance photodetection
• The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
• Tunable Terahertz Amplification Based on Photoexcited Active Graphene Hyperbolic Metamaterials
• Probing the energy conversion pathways between light, carriers and lattice in real time with attosecond core-level spectroscopy
• Carrier dynamics in graphene: ultrafast many-particle phenomena
• Slow interband recombination promotes an anomalous thermoelectric response of the $p-n$ junctions