Carrier multiplication in graphene under Landau quantization

Abstract

Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier multiplication has been theoretically predicted and recently experimentally observed. However, due to the absence of a bandgap and competing phonon-induced electron-hole recombination, the extraction of charge carriers remains a substantial challenge. Here we present a new strategy to benefit from the gained charge carriers by introducing a Landau quantization that offers a tunable bandgap. Based on microscopic calculations within the framework of the density matrix formalism, we report a significant carrier multiplication in graphene under Landau quantization. Our calculations reveal a high tunability of the effect via externally accessible pump fluence, temperature, and the strength of the magnetic field.

6 pages, 5 figures

References in corpus (2)

• Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene
• Filling-Factor-Dependent Magnetophonon Resonance in Graphene

Cited by in corpus (8)

• Pseudo-magnetic field-induced ultra-slow carrier dynamics in periodically strained graphene
• Microscopic description of intraband absorption in graphene: the occurrence of transient negative differential transmission
• Continuous wave lasing between Landau levels in graphene
• Microscopic origin of the bolometric effect in graphene
• Review on carrier multiplication in graphene
• Symmetry-breaking supercollisions in Landau-quantized graphene
• Current enhancement due to field-induced dark carrier multiplication in graphene
• Observation of chiral photocurrent transport in the quantum Hall regime in graphene