Soft Carrier Multiplications by Hot Electrons in Graphene

Abstract

By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not characterized by a field threshold unlike in conventional semiconductors, but is a quadratic function of the electric field. We also show that the resulting current is an increasing function of the electronic temperature, but decreases with increasing carrier concentration.

References in corpus (3)

• Dielectric function, screening, and plasmons in 2D graphene
• Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene
• Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors

Cited by in corpus (5)

• Non-equilibrium dynamics of photo-excited electrons in graphene: collinear scattering, Auger processes, and the impact of screening
• The ultrafast dynamics and conductivity of photoexcited graphene at different Fermi energies
• Nonequilibrium plasmons with gain in graphene
• Impact Ionization and Carrier Multiplication in Graphene
• Terahertz Harmonic Generation in Graphene