Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors
arXiv:1010.4037 · doi:10.1109/TNANO.2011.2112375
Abstract
We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [Nature Nanotechnology 3, 684 (2008)] without assuming carrier density-dependent velocity saturation.
7 pages, 8 figures
References in corpus (5)
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Substrate limited electron dynamics in graphene
- Transport properties of graphene in the high-current limit
- Diffusive Charge Transport in Graphene on SiO2