Partial preservation of chiral symmetry and colossal magnetoresistance in adatom doped graphene

Abstract

We analyze the electronic properties of adatom doped graphene in the low impurity concentration regime. We focus on the Anderson localized regime and calculate the localization length ($\xi$) as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon's $p_z$ states and form a partially filled band close to the Dirac point. Near the impurity band center, the chiral symmetry of the system's effective Hamiltonian is partially preserved which leads to a large enhancement of $\xi$. The sensitivity of transport properties, namely Mott's variable range hopping scale $T_0$, to an external magnetic field perpendicular to the graphene sheet leads to a colossal magnetoresistance effect, as observed in recent experiments.

5 pages, 4 figs. Few comments and references added. To appear in PRB

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Cited by in corpus (4)

• Critical delocalization of chiral zero energy modes in graphene
• Diffusion of fluorine adatoms on doped graphene
• Impurities and electronic localization in graphene bilayers
• Impurity states and Localization in Bilayer Graphene: the Low Impurity Concentration Regime