Impurities and electronic localization in graphene bilayers
arXiv:1503.03110 · doi:10.1103/PhysRevB.91.045435
Abstract
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution and localization length of these states depend on the field polarization.
7 pages, 6 figures
References in corpus (24)
- The electronic properties of graphene
- Anderson Transitions
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Andreev reflection and Klein tunneling in graphene
- Asymmetry gap in the electronic band structure of bilayer graphene
- The electronic properties of bilayer graphene
- The Kernel Polynomial Method
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Electron transport in disordered graphene
- Modeling disorder in graphene
- Effect of Disorder on Transport in Graphene
- Resonant scattering by realistic impurities in graphene
- Electronic properties of bilayer and multilayer graphene
- Modeling electronic structure and transport properties of graphene with resonant scattering centers
- Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields
- Monovalent impurities on graphene: midgap states and migration barriers
- Colossal negative magnetoresistance in dilute fluorinated graphene
- Chebyshev-BdG: an efficient numerical approach to inhomogeneous superconductivity
- Peierls-type Instability and Tunable Band Gap in Functionalized Graphene
- Conductivity of disordered graphene at half filling
- Sublattice ordering in a dilute ensemble of defects in graphene
- Quantum Hall Effect in Hydrogenated Graphene
- Tuning impurity states in bilayer graphene
- Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene