Impurities and electronic localization in graphene bilayers

Abstract

We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution and localization length of these states depend on the field polarization.

7 pages, 6 figures

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Cited by in corpus (4)

• Graphene on graphene antidot lattices: Electronic and transport properties
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Fano-shaped impurity spectral density, electric-field-induced in-gap state and local magnetic moment of an adatom on trilayer graphene
• Surface states and quasiparticle interference in Bernal and rhombohedral graphite with and without trigonal warping