Graphene on graphene antidot lattices: Electronic and transport properties

Abstract

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken, by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a novel bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with the perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.

arXiv comment13 pages, 10 figures, submitted

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• A DFT study on the electronic and magnetic properties of triangular graphene antidot lattices
• Engineering two-dimensional kagome topological insulator from porous graphene
• Predicting edge-localized monovacancy defects in zigzag graphene nanoribbons from Floquet quasienergy spectrum
• Giant Magnetoresistance in Bilayer Graphene Nanoflakes