Quantum Hall Effect in Hydrogenated Graphene
arXiv:1301.1257 · doi:10.1103/PhysRevLett.110.176801
Abstract
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 and corresponding Ioffe-Regel disorder parameter . In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of . Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
4 pages, 4 figures + supplemental info
References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- Control of graphene's properties by reversible hydrogenation
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Multicomponent fractional quantum Hall effect in graphene
- Spin and valley quantum Hall ferromagnetism in graphene
- Colossal negative magnetoresistance in dilute fluorinated graphene
Cited by in corpus (9)
- Spin Transport in Hydrogenated Graphene
- Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
- Unconventional Features in the Quantum Hall Regime of Disordered Graphene: Percolating Impurity States and Hall Conductance Quantization
- Efficient Linear Scaling Approach for Computing the Kubo Hall Conductivity
- Quantum transport in chemically functionalized graphene at high magnetic field: Defect-Induced Critical States and Breakdown of Electron-Hole Symmetry
- Measurement of Topological Berry Phase in Highly Disordered Graphene
- Impurities and electronic localization in graphene bilayers
- Partial preservation of chiral symmetry and colossal magnetoresistance in adatom doped graphene
- Large magnetoresistance by Pauli blockade in hydrogenated graphene