152 citations · 280 across the 5 of their papers we have counts for
5 papers
Mechanical Flip-Chip for Ultra-High Electron Mobility Devices
K. Bennaceur, B. A. Schmidt, S. Gaucher +6
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in sel…
Quantum Hall Effect in Hydrogenated Graphene
J. Guillemette, S. S. Sabri, B. Wu +10
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 and…
Carrier drift velocity and edge magnetoplasmons in graphene
I. Petkovic, F. I. B. Williams, K. Bennaceur +3
We investigate electron dynamics at the graphene edge by studying the propagation of collective edge magnetoplasmon (EMP) excitations. By timing the travel of narrow wave-packets o…
Unveiling quantum Hall transport by Efros-Shklovskii to Mott variable range hopping transition with Graphene
Keyan Bennaceur, Patrice Jacques, Fabien Portier +2
The quantum localization in the quantum Hall regime is revisited using Graphene monolayers with accurate measurements of the longitudinal resistivity as a function of temperature a…
Transport and elastic scattering times as probes of the nature of impurity scattering in single and bilayer graphene
M. Monteverde, C. Ojeda-Aristizabal, R. Weil +7
Both transport and elastic scattering times are experimentally determined from the carrier density dependence of the magnetoconductance of monolayer and bilayer gr…