Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene

Abstract

Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on the polarity of the applied bias as long as hybridization with the impurity occurs within a single layer. For an impurity level inside the conduction band a positive bias creates the new localized in-gap state. A negative bias does not produce the same result and leads to a simple broadening of the impurity level. The implications for transport are discussed including a possibility of gate-controlled Kondo effect.

5 pages, 2 figures

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• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Ferromagnetic induced Kondo effect in graphene with a magnetic impurity
• Impurities and electronic localization in graphene bilayers
• Optical properties of biased bilayer graphene due to gap parameter effects
• Impurity states and Localization in Bilayer Graphene: the Low Impurity Concentration Regime