Electric bias control on impurity effects in bigraphene

Abstract

Formation of localized impurity levels within the band gap in bigraphene under applied electric field is considered and the conditions for their collectivization at finite impurity concentration are established. It is shown that a qualitative restructuring of quasiparticle spectrum within the initial band gap and then specific metal-insulator phase transitions are possible for such disordered system and can be effectively controlled by variation of the electric field bias at given impurity perturbation potential and concentration. Since these effects can be expected at low impurity concentrations but at not too low temperatures, they can be promising for practical applications in nanoelectronics devices.

10 pages, 5 figures. Previous version was revised, some new discussion on observable effects of impurity band and a new figure were added

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electronic properties of bilayer and multilayer graphene
• Energy gap tuning in graphene on hexagonal boron nitride bilayer system
• Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
• Quantum Hall Effect of Dirac Fermions in Graphene: Disorder Effect and Phase Diagram
• Effect of a single impurity on the local density of states in monolayer and bilayer graphene
• Supercritical Coulomb Impurities in Gapped Graphene
• Coulomb impurity in graphene
• Tuning impurity states in bilayer graphene
• Localized states due to expulsion of resonant impurity levels from the continuum in bilayer graphene
• Impurity effects on electronic transport in ferropnictide superconductors

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• Electronic and Phonon Instabilities in Bilayer Graphene under Applied External Bias