activity
19982024
most citedExact Solution of Ising Model on a Small-World Network

48 citations · 201 across the 23 of their papers we have counts for

collaborators

23 papers

cond-mat.mes-hall2024

Impurity effects in twisted carbon nanotubes

Yuriy G. Pogorelov, Volodymyr Turkowski, Vadim M. Loktev

We consider electronic spectra of twisted carbon nanotubes and their perturbation by impurity atoms absorbed at different positions on nanotube surface within the framework of Ande…

cond-mat.mes-hall2023

Topological conditions for impurity effects in graphene nanosystems

Y. G. Pogorelov, V. M. Loktev

We consider electronic spectra of graphene nanotubes and their perturbation by impurity atoms absorbed at different positions on nanotube surfaces, within the framework of Anderson…

cond-mat.dis-nn2022★ 4 cited

Impurity effects on Dirac modes in graphene armchair nanoribbons

Yuriy G. Pogorelov, Vadim M. Loktev

We consider finite ribbons of graphene with armchair orientation of their edges to study in detail impurity effects on specific Dirac-like modes. In the framework of Anderson hybri…

cond-mat.mes-hall2020★ 13 cited

Impurity resonance effects in graphene impurity location, concentration and sublattice occupation

Yuriy G. Pogorelov, Vadim M. Loktev, Denis Kochan

Unique electronic band structure of graphene with its semi-metallic features near the charge neutrality point is sensitive to impurity effects. Using the Lifshitz and Anderson impu…

cond-mat.dis-nn2015★ 10 cited

Biased doped silicene as a source for advanced electronics

Yuriy G. Pogorelov, Vadim M. Loktev

Restructuring of electronic spectrum in a buckled silicene monolayer under some applied voltage between its two sublattices and in presence of certain impurity atoms is considered.…

cond-mat.dis-nn2014★ 9 cited

Electric bias control on impurity effects in bigraphene

Y. G. Pogorelov, M. C. Santos, V. M. Loktev

Formation of localized impurity levels within the band gap in bigraphene under applied electric field is considered and the conditions for their collectivization at finite impurity…