Impurity band induced by point defects in graphene

Abstract

It is pointed out that point defects on graphene are strongly correlated and can not be treated as independent scatters. In particular, for large on-site defect potential, it is shown that defects induce an impurity band with density of state characterized by the Wigner semi-circle law. We find that the impurity band enhances conductivity to the order of $4e^2/h$ and explains the absence of strong localization. Furthermore,the impurity band supports ferromagnetism with the induced magnetic moment approaching 1${\mu }_B$ per defect in the limit of infinite quasi-particle lifetime.

4, pages, 2 figures

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• Properties of Graphene: A Theoretical Perspective
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• Graphene-based modulation-doped superlattice structures
• Ferromagnetism and quantum anomalous Hall effect in one-side-saturated buckled honeycomb lattices
• Josephson effect in Graphene SNS Junction with a Single Localized Defect
• Density of states of a graphene in the presence of strong point defects
• Impurity State and Variable Range Hopping Conduction in Graphene
• Accurate evaluation of the Green's function of disordered graphenes
• Magnetic phases and unusual topological electronic structures of Weyl semimetals in strong interaction limit
• Models of Strong Interaction in Flat-Band Graphene Nanoribbons: Magnetic Quantum Crystals
• Potential and spin-exchange interaction between Anderson impurities in graphene
• Collective resonances near zero energy induced by a point defect in bilayer graphene