Graphene-based modulation-doped superlattice structures

Abstract

The electronic transport properties of graphene-based superlattice structures are investigated. A graphene-based modulation-doped superlattice structure geometry is proposed and consist of periodically arranged alternate layers: InAs/graphene/GaAs/graphene/GaSb. Undoped graphene/GaAs/graphene structure displays relatively high conductance and enhanced mobilities at elevated temperatures unlike modulation-doped superlattice structure more steady and less sensitive to temperature and robust electrical tunable control on the screening length scale. Thermionic current density exhibits enhanced behaviour due to presence of metallic (graphene) mono-layers in superlattice structure. The proposed superlattice structure might become of great use for new types of wide-band energy gap quantum devices.

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References in corpus (3)

• Josephson effect in ballistic graphene
• Superlattice Structures of Graphene based Nanoribbons
• Finite Element Simulation of the Optical Modes of Semiconductor Lasers

Cited by in corpus (4)

• Influence of the Constant Electric Field on the Mutual Rectification of the Electromagnetic Waves in Graphene Superlattice
• A transverse current rectification in graphene superlattice
• Thermodynamic properties of tunneling quasiparticles in graphene-based structures
• Conductance enhancement due to atomic potential fluctuations in graphene