Screening in gated bilayer graphene

Abstract

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.

4 pages,4 figures

References in corpus (8)

• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Asymmetry gap in the electronic band structure of bilayer graphene
• Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Infrared spectroscopy of electronic bands in bilayer graphene
• Optical conductivity of bilayer graphene with and without an asymmetry gap
• Effect of electron-electron interactions on the conductivity of clean graphene
• Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy

Cited by in corpus (10)

• The electronic properties of bilayer graphene
• Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
• Measurement of the electronic compressibility of bilayer graphene
• Coulomb screening and collective excitations in biased bilayer graphene
• Graphene-based modulation-doped superlattice structures
• Ferrimagnetic and antiferromagnetic phase in bilayer graphene nanoflake controlled with external electric fields
• Screening in gated bilayer graphene via variational calculus
• One-dimensional plasmons confined in bilayer graphene p-n junctions
• Plasmon modes in double-layer biased bilayer graphene
• Applied electric and magnetic field effects on the bandgap formation and antiferromagnetic ordering in AA-stacked Bilayer Graphene