Metallic proximity effect in ballistic graphene with resonant scatterers
arXiv:0910.2339 · doi:10.1088/0268-1242/25/3/034007
Abstract
We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.
9 pages, 2 figures
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- Detection of Individual Gas Molecules Absorbed on Graphene
- Control of graphene's properties by reversible hydrogenation
- Charged Impurity Scattering in Graphene
- Andreev reflection and Klein tunneling in graphene
- Bipolar supercurrent in graphene
- Quantum-limited shot noise in graphene
- Phase Coherent Transport of Charges in Graphene Quantum Billiard
- Electron transport in disordered graphene
- Effect of high-k environment on charge carrier mobility in graphene
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- Shot Noise in Ballistic Graphene
- Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
- Quantum criticality and minimal conductivity in graphene with long-range disorder
- Electrostatic confinement of electrons in an integrable graphene quantum dot
- Orthogonality catastrophe and Kondo effect in graphene
- Resonant low-energy electron scattering on short-range impurities in graphene
- Ballistic transport in disordered graphene
- Impurity-assisted tunneling in graphene
- Conductivity of disordered graphene at half filling