Resonant electron scattering by graphene antidot
arXiv:1509.08698 · doi:10.1103/PhysRevB.92.195413
Abstract
The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width -- by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects (charged nanohole) on the edge states and show that they do not affect the presence of the resonances, but can substantially influence their position, height and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.
10 pages, 4 figures
References in corpus (21)
- Charged Impurity Scattering in Graphene
- Andreev reflection and Klein tunneling in graphene
- Raman Spectroscopy of Graphene Edges
- Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Graphene as an electronic membrane
- Vacuum Polarization and Screening of Supercritical Impurities in Graphene
- Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene
- Robustness of edge states in graphene quantum dots
- Magneto-conductance Oscillations in Graphene Antidot Arrays
- Resonant low-energy electron scattering on short-range impurities in graphene
- Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
- Scattering of two-dimensional massless Dirac electrons by a circular potential barrier
- Electronic transport in disordered graphene antidot lattice devices
- Dirac fermion quantization on graphene edges: Isospin-orbit coupling, zero modes and spontaneous valley polarization
- Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
- Dirac model of electronic transport in graphene antidot barriers
- Negative terahertz conductivity in disordered graphene bilayers with population inversion
- Transport of Massless Dirac Fermions in Non-topological Type Edge States
- Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene
- Protected edge states in silicene antidots and dots in magnetic field
Cited by in corpus (5)
- Single-electron gap in the spectrum of twisted bilayer graphene
- Surface States of a System of Dirac Fermions: A Minimal Model
- Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers
- To gap or not to gap? Mass distortions and edge modes in graphene armchair nanoribbons
- Resonance Absorption of Terahertz Radiation in Nanoperforated Graphene