Orbital Quantization in a System of Edge Dirac Fermions in Nanoperforated Graphene

Abstract

The dependence of the electric resistance R of nanoperforated graphene samples on the position of the Fermi level, which is varied by the gate voltage Vg, has been studied. Nanoperforation has been performed by irradiating graphene samples on a Si/SiO${}_2$ substrate by heavy (xenon) or light (helium) ions. A series of regular peaks have been revealed on the R(Vg) dependence at low temperatures in zero magnetic field. These peaks are attributed to the passage of the Fermi level through an equidistant ladder of levels formed by orbitally quantized states of edge Dirac fermions rotating around each nanohole. The results are in agreement with the theory of edge states for massless Dirac fermions.

arXiv comment7 pages, 5 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Boundary conditions for Dirac fermions on a terminated honeycomb lattice
• Dirac boundary condition at the reconstructed zigzag edge of graphene
• Spin-orbit coupling, edge states and quantum spin Hall criticality due to Dirac fermion confinement: The case study of graphene

Cited by in corpus (5)

• Surface States of a System of Dirac Fermions: A Minimal Model
• Structure of Magnetic Inhomogeneities in Films with Topological Features
• Transport of Massless Dirac Fermions in Non-topological Type Edge States
• Resonant electron scattering by graphene antidot
• Resonance Absorption of Terahertz Radiation in Nanoperforated Graphene