Electronic transport properties and quantum localization effects monitored by selective functionalization in Bernal bilayer graphene

Abstract

Monitoring electronic properties of 2D materials is an essential step to open a way for applications such as electronic devices and sensors. From this perspective, Bernal bilayer graphene (BLG) is a fairly simple system that offers great possibilities for tuning electronic gap and charge carriers' mobility by selective functionalization (adsorptions of atoms or molecules). Here, we present a detailed numerical study of BLG electronic properties when two types of adsorption site are present simultaneously. We focus on realistic cases that could be realized experimentally with adsorbate concentration c varying from 0.25% to 5%. For a given value of c, when the electronic doping is lower than c we show that quantum effects, which are ignored in usual semi-classical calculations, strongly affect the electronic structure and the transport properties. A wide range of behaviors is indeed found, such as gap opening, metallic behavior or abnormal conductivity, which depend on the adsorbate positions, the c value, the doping, and eventually the coupling between midgap states which can create a midgap band. These behaviors are understood by simple arguments based on the fact that BLG lattice is bipartite. We also analyze the conductivity at low temperature, where multiple scattering effects cannot be ignored. Moreover, when the Fermi energy lies in the band of midgap states, the average velocity of charge carriers cancels but conduction is still possible thanks to quantum fluctuations of the velocity.

18 pages, 14 figures

References in corpus (18)

• Electric Field Effect in Atomically Thin Carbon Films
• The electronic properties of graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Chiral tunneling and the Klein paradox in graphene
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Substrate-induced band gap opening in epitaxial graphene
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• The electronic properties of bilayer graphene
• Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
• Modeling disorder in graphene
• Resonant scattering by realistic impurities in graphene
• Adsorbate-limited conductivity of graphene
• Transport properties of 2D graphene containing structural defects
• Physical properties and device applications of graphene oxide
• Electronic transport through bilayer graphene flakes
• Electronic Transport in Disordered Bilayer and Trilayer Graphene
• Excited states in bilayer graphene quantum dots
• Hydrogenation-induced ferromagnetism on graphite surfaces

Cited by in corpus (2)

• Electronic structure and conductivity in functionalized multilayer black phosphorene
• Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals