Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers

Abstract

Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $\theta$, forming Moiré pattern, confine electrons in a tunable way as a function of $\theta$. Here, we study electronic structure and transport in tBLG using tight-binding numerical calculations in commensurate twisted bilayer structures and a pertubative continuous theory, which is valid for not too small angles ($\theta >\sim 2^{\circ }$). This two approaches allow to understand the effect of $\theta$ on the local density of states, the electron lifetime due to disorder, the dc-conducitivity and the quantum correction of the conductivity due to multiple scattering effects. We distinguished the cases where disorder is equaly distributed in the two layer or only in one layer. When only one layer is disordered, diffusion properties depends strongly on $\theta$, showing thus the effect of Moiré electronic localisation at intermediate angles, $\sim 2^{\circ }<\theta <\sim 20^{\circ }$.

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Cited by in corpus (5)

• Electronic localization in twisted bilayer MoS${}_2$ with small rotation angle
• Electronic structure and conductivity in functionalized multilayer black phosphorene
• Moir{é} pattern assisted geometric resonant tunneling in disordered twisted bilayer graphene
• Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals
• Electronic transport properties and quantum localization effects monitored by selective functionalization in Bernal bilayer graphene