Electronic localization in twisted bilayer MoS${}_2$ with small rotation angle

Abstract

Moiré patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS${}_2$ for the whole range of rotation angles $\theta$. We show that isolated bands appear at low energy for $\theta \lesssim 5-6^{\circ }$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $\theta \lesssim 2^{\circ }$.

13 pages, 14 figures

References in corpus (8)

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• Continuum Model of the Twisted Bilayer
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• Numerical studies of confined states in rotated bilayers of graphene
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• Lithium intercalation in MoS${}_2$ bilayers and implications for moiré flat bands