Topological Aspects of Charge-Carrier Transmission across Grain Boundaries in Graphene

Abstract

We systematically investigate the transmission of charge carriers across the grain-boundary defects in polycrystalline graphene by means of the Landauer-Büttiker formalism within the tight-binding approximation. Calculations reveal a strong suppression of transmission at low energies upon decreasing the density of dislocations with the smallest Burger's vector $\mathbf{b}=(1,0)$. The observed transport anomaly is explained from the point of view of back-scattering due to localized states of topological origin. These states are related to the gauge field associated with all dislocations characterized by $\mathbf{b}=(n,m)$ with $n-m\ne 3q$ ($q\in \mathbb{Z}$). Our work identifies an important source of charge-carrier scattering caused by topological defects present in large-area graphene samples produced by chemical vapor deposition.

5 pages, 4 figures

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• Electronic Transport in Graphene with Aggregated Hydrogen Adatoms
• Conductivity of epitaxial and CVD graphene with correlated line defects
• Probing local moments in nanographenes with electron tunneling spectroscopy
• Valley-dependent spin-orbit torques in two dimensional hexagonal crystals
• Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene
• Electronic transport in graphene with out-of-plane disorder
• Grain boundary-induced variability of charge transport in hydrogenated polycrystalline graphene
• Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries
• Probing barrier transmission in ballistic graphene