Thermoelectric transport in graphene under strain fields modeled by Dirac oscillators
arXiv:2509.04704 · doi:10.1103/3r17-kfy7
Abstract
Graphene has emerged as a paradigmatic material in condensed matter physics due to its exceptional electronic, mechanical, and thermal properties. A deep understanding of its thermoelectric transport behavior is crucial for the development of novel nanoelectronic and energy-harvesting devices. In this work, we investigate the thermoelectric transport properties of monolayer graphene subjected to randomly distributed localized strain fields, which locally induce impurity-like perturbations. These strain-induced impurities are modeled via 2D Dirac oscillators, capturing the coupling between pseudorelativistic charge carriers and localized distortions in the lattice. Employing the semiclassical Boltzmann transport formalism, we compute the relaxation time using a scattering approach tailored to the Dirac oscillator potential. From this framework, we derive analytical expressions for the electrical conductivity, Seebeck coefficient, and thermal conductivity. The temperature dependence of the scattering centers density is also investigated. Our results reveal how strain modulates transport coefficients, highlighting the interplay between mechanical deformations and thermoelectric performance in graphene. This study provides a theoretical foundation for strain engineering in thermoelectric graphene-based devices.
Accepted in Physical Review B
References in corpus (32)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Ultrahigh electron mobility in suspended graphene
- Thermal Properties of Graphene, Carbon Nanotubes and Nanostructured Carbon Materials
- Electronic transport in two dimensional graphene
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Gauge fields in graphene
- Electronic Properties of Graphene in a Strong Magnetic Field
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Resonant scattering by realistic impurities in graphene
- Generating quantizing pseudomagnetic fields by bending graphene ribbons
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Graphene Nanobubbles as Valley Filters and Beamsplitters
- Gauge fields from strain in graphene
- Pseudo magnetic field in strained graphene: revisited
- Is Thermal Conductivity of Graphene Divergent and Higher Than Diamond?
- Scattering resonances in graphene
- Scattering of Dirac electrons by circular mass barriers: valley filter and resonant scattering
- Optimal traps in graphene
- Conductance signatures of electron confinement induced by strained nanobubbles in graphene
- Dislocation defect as a bulk probe of monopole charge of multi-Weyl semimetals
- Analytic approach to magneto-strain tuning of electronic transport through a graphene nanobubble: Perspectives for a strain sensor
- Electronic transport in torsional strained Weyl semimetals
- Gate-Tunable Graphene Quantum Dot and Dirac Oscillator
- Graphene nanodrums as valleytronic devices
- Thermoelectric transport in torsional strained Weyl semimetals
- Electrons trapped in graphene magnetic quantum dots with mass term
- Mechanical control of quantum transport in graphene
- Boosting energy levels in graphene magnetic quantum dots through magnetic flux and inhomogeneous gap
- Distribution of ripples in graphene membrane
- Electromagnetic coupling and transport in a topological insulator-graphene hetero-structure