3.2k citations · 4.9k across the 4 of their papers we have counts for
4 papers
Diffusive Charge Transport in Graphene on SiO2
J. -H. Chen, C. Jang, M. Ishigami +3
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic va…
Atomic Structure of Graphene on SiO2
Masa Ishigami, J. H. Chen, W. G. Cullen +2
We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating sili…
Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
J. H. Chen, C. Jang, S. Xiao +2
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is…
Hooge's Constant of Carbon Nanotube Field Effect Transistors
Masa Ishigami, J. H. Chen, E. D. Williams +3
The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air.…