Magnetoresistance and spin-transfer torque in magnetic tunnel junctions
arXiv:0803.2254 · doi:10.1016/j.jmmm.2007.12.008
Abstract
We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make nonvolatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetoresistance of MTJs, how their properties change as a function of tunnel-barrier thickness and applied bias, and what are the magnitude and direction of the spin-transfer-torque vector induced by a tunnel current.
37 pages, 2 figures. Contribution to a collection of "Current Perspectives" articles on spin transfer torque now available in the Journal of Magnetism and Magnetic Materials
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