Current-induced synchronized switching of magnetization
arXiv:1208.3050 · doi:10.1063/1.4742917
Abstract
We investigate current-induced magnetization switching for a multilayer structure that allows a reduced switching current while maintaining high thermal stability of the magnetization. The structure consists of a perpendicular polarizer, a perpendicular free-layer, and an additional free-layer having in-plane magnetization. When the current runs perpendicular to the structure, the in-plane free-layer undergoes a precession and supplies an internal rf field to the perpendicular free-layer, resulting in a reduced switching current for one current polarity. For the other polarity, the in-plane free-layer almost saturates perpendicular to the plane and acts as another perpendicular polarizer, which also reduces the switching current.
18 pages, 4 figures
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Cited by in corpus (5)
- Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
- Thermally activated switching of perpendicular magnet by spin-orbit spin torque
- Back hopping in spin-transfer-torque devices, possible origin and counter measures
- Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories
- Optimization of spin-torque switching using AC and DC pulses