Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions
arXiv:1110.3491 · doi:10.1109/TMAG.2011.2157108
Abstract
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form {\bf T}=T_{||}{\bf M}x({\bf z}x{\bf M})+T_{\bot}{\bf z}x{\bf M}, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, , which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.
5 pages, 5 figures
References in corpus (9)
- Spin Transfer Torques
- Magnetoresistance and spin-transfer torque in magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
- Nonvolatile ferroelectric control of ferromagnetism in (Ga,Mn)As
- Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of Fe(001) surface
- Spin-transfer torque in magnetic tunnel junctions: Scattering theory
- Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects
- Spin Torque in Anisotropic Tunneling Junctions