Spin Torque in Anisotropic Tunneling Junctions
arXiv:1110.3488 · doi:10.1103/PhysRevB.83.172403
Abstract
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, in-plane and perpendicular to the plane of rotation, that can induce either current-driven {\em magnetization switching} from in-plane to out-of-plane configuration or {\em magnetization precessions}, similarly to Spin Transfer Torque in spin-valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.
4 pages, 4 figures
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Cited by in corpus (7)
- Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
- Spin-orbit torques from interfacial spin-orbit coupling for various interfaces
- Spin-transfer torque and spin-polarization in topological-insulator/ferromagnet vertical heterostructures
- Charge pumping by magnetization dynamics in magnetic and semi-magnetic tunnel junctions with interfacial Rashba or bulk extrinsic spin-orbit couplings
- How to construct the proper gauge-invariant density matrix in steady-state nonequilibrium: Applications to spin-transfer and spin-orbit torques
- Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances
- Voltage-driven v.s. Current-driven Spin Torque in Anisotropic Tunneling Junctions