Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances
arXiv:1206.0615 · doi:10.1088/0953-8984/24/36/365801
Abstract
Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems. This mechanism is manifested by a non-monotonic dependence of the TAMR effect on the thickness of the tunnel barrier, with a maximum for intermediate thicknesses. A detailed scan of k-resolved transmissions over the two-dimensional Brillouin zone proves an interplay between a few hybridization-induced hot spots and a contribution to the tunnelling from the vicinity of the Gamma-bar point. This interpretation is supported by calculated properties of a simple tight-binding model of the junction which reproduce qualitatively most of the features of the first-principles theory.
arXiv comment16 pages, 9 figures
References in corpus (10)
- Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
- Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
- Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions
- Interface resistance of disordered magnetic multilayers
- Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of Fe(001) surface
- Interface effects in spin-dependent tunneling
- Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations
- Spin Torque in Anisotropic Tunneling Junctions
- Landauer theory of ballistic torkances in non-collinear spin valves